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Issue 3, 2015
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Bulk crystal growth of hybrid perovskite material CH3NH3PbI3

Yangyang Dang,a  Yang Liu,a  Youxuan Sun,a  Dongsheng Yuan,a  Xiaolong Liu,a  Weiqun Lu,a  Guangfeng Liu,a  Haibing Xia*a  and  Xutang Tao*ab 
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* Corresponding authors

a State Key Laboratory of Crystal Materials, Shandong University, No. 27 Shanda South Road, Jinan, China
E-mail: txt@sdu.edu.cn, hbxia@sdu.edu.cn
Fax: +86 531 88574135
Tel: +86 531 88364963

b Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), No. 27 South Shanda Road, Jinan, China

Abstract

Organic–inorganic hybrid perovskite materials have been receiving considerable attention due to their promising applications in many optoelectronic fields. However, some of the fundamental properties of perovskite materials are still disputed, because most of them are derived from a thin-film state. To comprehend the intrinsic characteristics in a single crystal, herein we report, for the first time, the bulk crystal growth of CH3NH3PbI3. Single crystals of tetragonal CH3NH3PbI3 with dimensions of 10 mm × 10 mm × 8 mm were grown by a temperature-lowering method in HI solution. Studies in to the refinement and orientations of the CH3NH3PbI3 single crystal structure were conducted based on a high quality crystal. The absorption edge of a CH3NH3PbI3 single crystal was located at about 836 nm, indicating that the band gap of CH3NH3PbI3 is approximately 1.48 eV, which is close to the theoretical results and smaller than those derived from polycrystalline and thin-films. CH3NH3PbI3 crystal exhibits a relatively wide absorption (from 250 nm to 800 nm) and a relatively good thermal stability.

Graphical abstract: Bulk crystal growth of hybrid perovskite material CH3NH3PbI3

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Publication details

The article was received on 19 Oct 2014, accepted on 10 Nov 2014 and first published on 26 Nov 2014


Article type: Paper
DOI: 10.1039/C4CE02106A
Citation: CrystEngComm, 2015,17, 665-670
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    Bulk crystal growth of hybrid perovskite material CH3NH3PbI3

    Y. Dang, Y. Liu, Y. Sun, D. Yuan, X. Liu, W. Lu, G. Liu, H. Xia and X. Tao, CrystEngComm, 2015, 17, 665
    DOI: 10.1039/C4CE02106A

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